Below 28 nm, maximum device length limitations mean that analog designers often need to connect multiple short-length MOSFETs in series to create long-channel devices. These series-connected devices ...
AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...
The quest to achieve ever-lower operating voltage and lower power consumption levels in circuit design is a trend that has placed difficult challenges on electrical engineers as they run up against ...
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Fig. 1. Series-connected supercapacitors; also called ultracapacitors, or electrochemical double layer capacitors (EDLC). Individual supercapacitors are available from 1Farad to 100s of Farads.
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