SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...
SEOUL, South Korea, October 28, 2024--(BUSINESS WIRE)--Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced today the expansion of production for its 7th generation ...
The FDMD8280 is a dual N-channel Power Trench® MOSFET that has a rated drain to source voltage of 80 V and continuous drain current of 40 A in its case temperature condition. In an on state, the ...
Developed with highly rugged trench MOSFET technology, the new 30V MXT LV MOSFET ensures a stable power supply for electric power steering SEOUL, South Korea, Dec. 18, 2023 /PRNewswire/ -- Magnachip ...
Phoenix, Ariz. – Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These ...
The following figures are datasheet plots of the Vishay SiE848DF that is an N-channel, 30-V trench power MOSFET housed in a PolarPAK package. The MOSFET is package-limited at 60 A and 25° C. What is ...
Power demands of computing and telecom applications are driving rapid developments in semiconductor components for power conversion. By looking at next-generation microprocessor requirements — a ...
You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet ...
As mobile devices become more advanced, the demand for compact Low Voltage (LV) MOSFETs with low 2)RSS(on) continues to grow. Magnachip’s MXT LV MOSFET product family offers ...
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