DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering. The BSM180D12P3C007 is a ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed C3M900V SiC MOSFET: Structure and Cost Analysis" report to their offering. The SiC C3M Platform is the first ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
The impact of materials on designing reliable devices. How packaging plays an important role in SiC MOSFET design. Determining the FIT rate for SiC MOSFETs. There’s no doubt that the material ...
Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...
Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...
Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
GeneSiC Semiconductor of Dulles Virginia has immediate availability of 3300V and 1700V 1000mΩ SiC MOSFETs – G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J. These SiC MOSFETs claim to enhance and ...
GeneSiC Semiconductor of Dulles Virginia, has announced 6.5kV SiC MOSFETs for medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure. 6.5kV SiC ...
The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
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