Advances in EV technology to make them more practical. How SiC MOSFETs will help meet the current challenges in the EV arena. The all-important high switching speeds of SiC MOSFETs. Silicon-carbide ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Since the first commercially available silicon-based power MOSFETs were introduced almost 40 years ago, they (along with their cousins, IGBTs) have been the primary power-handling control component in ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...

ROHM is advancing 4th-gen SiC MOSFETs while prepping for future tech. Credit: RidhamSupriyanto/Shutterstock. ROHM’s 4th generation silicon carbide (SiC) metal-oxide ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...

Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...