SAN JOSE, Calif. — For next-generation memory production, 193-nm lithography with self-aligned double-patterning (SADP) are the technology of choices over rival schemes, according to an analyst.

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are ...

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good ...

Intel has made significant strides in implementing High-NA EUV lithography by installing two High-NA litho machines, developing custom reticles as well as all-new optical proximity correction, and ...

Self-aligned lithographic process techniques are playing an increasingly important role in advanced technology nodes. Even with the growing use of extreme ultraviolet (EUV) lithography, ...