Tellurium nanowire transistors switch between boosting and suppressing their light response through voltage alone, enabling ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
The A1205, a general-purpose Hall-effect bipolar switch, is optimised for applications in which pulsing the supply line helps conserve power. Allegro MicroSystems Europe’s device is a next-generation ...
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